Shih-Hung Chen (Masters 2002; Ph.D. 2009) joined the Department of ESD and Product Engineering, SoC Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan, as an ESD Design Engineer in 2002. He has been with Device Reliability and Electric Characterization (DRE) Group at IMEC from 2010, and as ESD team lead and principal member of technical staff (PMTS) since 2019. He authored or co-authored more than 100 conference and journal publications. He is a peer reviewer for the IEEE Transactions on Electron Devices, IEEE Electron Device Letters, and IEEE Transactions on Device and Materials Reliability. He has also served as a technical program committee (TPC) member in IEEE International Reliability Physics Symposium (IRPS) since 2016, in EOS/ESD Symposium since 2014, and in IEEE International Symposium on Quality Electronic Design (ISQED) from 2013 to 2018, and also served as a session chair of Emerging Devices and Technologies (EDT) in ISQED from 2017 to 2019 and as a vice session chair and a session chair of ESD and LU in IRPS 2019 and 2020, respectively. His current research interests include ESD protections in advanced sub-5nm technology nodes, in 3D/2.5D IC applications, and in System Technology Co-Optimization (STCO) with the integrations of III-V compounds.