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Press Release An Overview of ANSI/ESD S20.20 – The Cornerstone of Semiconductor control programs February 6th, 2025 Rome, NY USA - The ANSI/ESD S20.20 standard has become the cornerstone for developing effective ESD…

An Overview of ANSI/ESD S20.20 Static electricity, a natural phenomenon that has existed for centuries, has long been a source of both curiosity and concern in various industries. Its first problematic…

Part 1: Charge Buildup and Resistance to Ground The normal world is full of electrostatic discharge (ESD) risks to unprotected ESD susceptible devices (ESDS). To handle these, we must set up an ESD Protected Area (EPA) in which we…

SOIC & SOT: The Microchips: Engineers Choose the Ten Best STEM Toys to Gift January 3, 2025   |By EOS/ESD Association, Inc. Purdue University’s Engineering Education College has selected “SOIC and SOT” as the #1…

January 1, 2025   |By Wen-Chieh Chen To continue Moore’s law, transistor scaling needs to be enabled by geometry innovations. From the 22nm node, bulk FinFET, a multi-gate transistor built on a silicon substrate, has replaced planar…

The Impact on ESD Risk of AI on Silicon Fabrication and the Implications of Increasing Memory Stacks December 1, 2024   |By James Davis, Greg O’Sullivan, Souvic Mitra, Bong Andres and EOS/ESD Association, Inc. Artificial intelligence (AI) has emerged as…